to -220f 1.base 2.collect or 3.emitter jiangsu changjiang elec tron ics technology co., ltd to -220f plastic-encapsulate transistors KSD1408 transistor (npn) fea tures z low frequency amplifier z medium speed switching maximum ratings (t a =25 unless otherw ise noted) electrical characteristics (t a =25 unless otherw ise specified) parameter symbol test conditions min typ max unit collecto r-base breakdown voltage v (br)cb o i c =100 a,i e =0 80 v collecto r-emitter breakdown voltage v (br)ce o * i c =50ma,i b =0 80 v emitter-ba se breakdown voltage v (br )ebo i e =100 a,i c =0 5 v collecto r cut-off current i cbo v cb =80v ,i e =0 30 a emitter cut-off current i ebo v eb =5v ,i c =0 100 a h fe(1) v ce =5v , i c =0 .5a 40 240 dc curr ent gain h fe(2) v ce =5v , i c =3 a 15 collecto r-emitter saturation voltage v ce(sa t) i c =3a,i b =0.3 a 1.5 v base-emitter vo ltage v be v ce =5v , i c =3a 1.5 v tr ansition frequency f t v ce =5v ,i c =0.5 a 8 mhz collecto r output capacitance c ob v cb =10v ,i e =0, f=1mhz 90 pf *pulse test: pulse width 300 s, duty cycle 2.0%. classification of h fe(1) ran k r o y ran ge 40-80 70-140 120-240 symbol paramete r value unit v cbo collector-bas e voltage 80 v v ceo collector-emitter v oltage 80 v v ebo emitter-base vo ltage 5 v i c collector curr ent 4 a p c collector po wer dissipation 2 w r ja thermal resist ance from junction to ambient 62.5 / w t j junction t emperature 150 t stg st orage temperature -55~+150 www.cj-elec.com 1 d , jul ,201 7 1 3 2
t y pical characteristics www.cj-elec.com ' , - x o ,201 200 300 400 500 600 700 800 900 1000 1100 1200 1e-3 0.01 0.1 1 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 1e-3 0.01 0.1 1 200 300 400 500 600 700 800 900 1000 1100 1200 0.01 0.1 1 0 50 100 150 200 250 300 350 400 450 500 1e-3 0.01 0.1 1 10 10 100 1000 012345 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 t a = 1 0 0 t a = 2 5 collcetor current i c (a) base-emiter voltage v be (mv) i c v be common emitter v ce =5v collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a ?? base-emitter saturation voltage v besat (mv) collector current i c (a) =10 t a =100 t a =25 i c v besat ?? 4 4 4 collector-emitter saturation voltage v cesat (mv) collector current i c (a) i c v cesat ?? t a =100 t a =25 =10 dc current gain h fe collector current i c (a) common emitter v ce =5v t a =25 t a =100 i c h fe ?? 5.0ma 4.5ma 4.0ma 3.5ma 3.0ma 2.5ma 2.0ma 1.5ma 1.0ma i b =0.5ma collector current i c (a) collector-emitter voltage v ce (v) common emitter t a =25 static characteristic
www.cj-elec.com 3 d,jul,2017 to-220f package outline dimensions mi n . max. min. max. a 4.300 4.700 0.169 0.185 a1 a2 2.800 3.200 0.110 0.126 a3 2.500 2.900 0.098 0.114 b 0.500 0.750 0.020 0.030 b1 1.100 1.350 0.043 0.053 b2 1.500 1.750 0.059 0.069 c 0.500 0.750 0.020 0.030 d 9.960 10.360 0.392 0.408 e 14.800 15.200 0.583 0.598 e f h 0.000 0.300 0.000 0.012 h1 h2 l 28.000 28.400 1.102 1.118 l1 1.700 1.900 0.067 0.075 l2 0.900 1.100 0.035 0.043 2.700 ref. 3.500 ref. 0.138 ref. 0.106 ref. 0.800 ref. 0.500 ref. 0.031 ref. 0.020 ref. symbol dimensions in millimeters dimensions in inches 2.540 typ. 0.100 typ. 1.300 ref. 0.051 ref.
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